Investigation on Electromagnetic Wave Absorption of SiCw/Si3N4 Composites Exposed to Short-Time Oxidation

Author:

Wen Zhongliu1,Zhou Wei2,Long Lan2,Li Yang2

Affiliation:

1. School of Materials Science and Energy Engineering, Foshan University, Foshan 528000, China

2. College of Metallurgy and Materials Engineering, Hunan University of Technology, Zhuzhou 412008, China

Abstract

As oxidation is inevitable during application of microwave absorbing materials (MAM) exposed to oxygen-containing atmosphere at elevated temperatures. The investigations concerning influences of oxidation on microstructure and microwave absorption (MA) properties are of great significance. Aiming to better regulating MA for Si3N4-based ceramics serviced in high temperature environment, the evolution of MA properties of SiCw/Si3N4 composites (SwSN) after oxidation at 1200 °C in ambient air for short time was studied. It was found that after oxidation for 7.5 h, both the real and imaginary permittivity of SwSN showed only slight decrease due to good oxidation protection provided by dense SiO2 layer formed on the surface. Moreover, SwSN after short-time of oxidation also showed an almost negligible decline in MA properties. SwSN which has good oxidation resistance and stable microwave attenuation abilities was subjected to oxidation at 1200 °C for short time. The results showed its favorable and potential applications in high-temperature microwave absorption fields.

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3