Author:
Konovalov Valery V.,Melo Andrew,Catledge Shane A.,Chowdhury Shafiul,Vohra Yogesh K.
Abstract
Addition of He to a high CH4 content (10.7 vol%) H2/CH4/N2 feedgas mixture for microwave plasma chemical vapor deposition produced hard (58–72 GPa), ultra-smooth nanostructured diamond films on Ti-6Al-4V alloy substrates. Upon increase
in He content up to 71 vol%, root mean squared (RMS) surface roughness of the film decreased to 9–10 nm and average diamond grain size to 5–6 nm. Our studies show that increased nanocrystallinity with He addition in plasma is related to plasma dilution, enhanced fragmentation of
carbon containing species, and enhanced formation of CN radical.
Publisher
American Scientific Publishers
Subject
Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering
Cited by
13 articles.
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