The Correlation Between the Preferred Orientation and Al Distribution of Al-Doped HfO2 Films by Plasma-Enhanced Atomic Layer Deposition-Reference-Cited by-同舟云学术

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The Correlation Between the Preferred Orientation and Al Distribution of Al-Doped HfO2 Films by Plasma-Enhanced Atomic Layer Deposition

Published:2018-05-01 Issue:5 Volume:10 Page:747-753
ISSN:1941-4900
Container-title:Nanoscience and Nanotechnology Letters
language:en
Short-container-title:nanosci nanotechnol lett

Author:

Kim Da-Young¹,Jang Jaeho²,Kim Bo-Ra¹,Kim Byung Jun²,Kim Hyoung Chan²,Joo Daekwon³,Park Pan-Kwi³,Kim Jin Hyock⁴,Ahn Ji-Hoon⁵,Shin Dong-Ok⁶,Nam Daegeun²,Moon Hyoung-Seok²,Kwon Se-Hun¹

Affiliation:

1. School of Materials Science and Engineering, Pusan National University, Busan 46241, Republic of Korea

2. Energy & Plant Group, Korea Institue of Industrial Technology (KITECH), Busan 46938, Republic of Korea

3. System LSI Division, Samsung Electronics Co., Ltd., Kyunggi-Do, Suwon 16677, Republic of Korea

4. Semiconductor Portfolio Management Team, SK Telecom, Seoul 04539, Republic of Korea

5. Department of Electronic Material Engineering, Korea Maritime and Ocean University, Busan 49112, Republic of Korea

6. Power Control Device Research Section, Electronic and Telecommunications Research Institue (ETRI), Daejeon 34129, Republic of Korea

Publisher

American Scientific Publishers

Subject

General Materials Science

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