Memory Effect of Low-Temperature Processed ZnO Thin-Film Transistors Having Metallic Nanoparticles as Charge Trapping Elements-Reference-Cited by-同舟云学术

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Memory Effect of Low-Temperature Processed ZnO Thin-Film Transistors Having Metallic Nanoparticles as Charge Trapping Elements

Published:2012-02-01 Issue:2 Volume:12 Page:1344-1347
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Park Young-Su,Kim Soo-Jin,Lyu Si-Hoon,Lee Byoung Hoon,Sung Myung Mo,Lee Jaegab,Lee Jang-Sik

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of a Blocking Layer on the Decrease in the Leakage Current in Organic Bistable Devices;Journal of Nanoscience and Nanotechnology;2013-09-01

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