The Electron Density and Energy States for Nanoclusters of GaAs

Abstract

The article deals with the choice of clusters based on a more detailed study of the GaAs structure and computer simulation of the physical properties of stable clusters. An instrumental concept of the interspheral space is introduced, which has certain features that distinguish it from the commonly used the lattice of the crystal cores. The parameters describing the forward and reciprocal spaces are determined by quasi-bound states in the corresponding spaces: in forward space—the number and location of the structural elements of the cluster; in the reciprocal space—the electron density and energy values. An approach with the use of the notion of an interspheral space on the structure of GaAs clusters and the results of a computer-analytic study that gives a solution to the equation of an interspheral oscillator is discussed.