Effect of Microwave Annealing on the Interface Properties Between the Top Silicon and Buried Oxide Layers in Silicon-on-Insulator MOSFETs
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Published:2019-10-01
Issue:10
Volume:19
Page:6043-6049
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ISSN:1533-4880
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Container-title:Journal of Nanoscience and Nanotechnology
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language:en
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Short-container-title:j nanosci nanotechnol
Affiliation:
1. Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, South Korea
Publisher
American Scientific Publishers
Subject
Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering