The Effect of Microwave Annealing of Reliability Characteristics on Amorphous IGZO Thin Film Transistors-Reference-Cited by-同舟云学术

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The Effect of Microwave Annealing of Reliability Characteristics on Amorphous IGZO Thin Film Transistors

Published:2019-04-01 Issue:4 Volume:19 Page:2189-2192
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Wu Chien-Hung¹,Chang Kow-Ming²,Chen Yi-Ming²,Zhang Yu-Xin³,Cheng Chia-Yao²

Affiliation:

1. Department of Electronics Engineering, Chung Hua University, Hsinchu, Taiwan, 30012, R.O.C

2. Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan, 30010, R.O.C

3. International College of Semiconductor Technology, National Chiao Tung University, Hsinchu, Taiwan, 30010, R.O.C

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Performance a-IGZO TFT Fabricated With Ultralow Thermal Budget via Microwave Annealing;IEEE Transactions on Electron Devices;2022-01

2. Effect of Mechanical Strain on Electrical Performance of Flexible P-Type SnO Thin-Film Transistors;IEEE Transactions on Electron Devices;2019-12

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