Resistive Switching Mechanism of HfO2 Based Resistance Random Access Memory Devices with Different Electrode Materials
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Published:2019-12-01
Issue:12
Volume:19
Page:8045-8051
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ISSN:1533-4880
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Container-title:Journal of Nanoscience and Nanotechnology
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language:en
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Short-container-title:j nanosci nanotechnol
Author:
Sun C1,
Lu S. M1,
Jin F1,
Mo W. Q1,
Song J. L1,
Dong K. F1
Affiliation:
1. School of Automation, China University of Geosciences, Wuhan 430074, China
Publisher
American Scientific Publishers
Subject
Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering