Photodetection Characteristics of Heterojunctions Comprising p-Type Ultrananocrystalline Diamond Films and n-Type Si Substrates at Low Temperatures-Reference-Cited by-同舟云学术

Photodetection Characteristics of Heterojunctions Comprising p-Type Ultrananocrystalline Diamond Films and n-Type Si Substrates at Low Temperatures

Published:2017-05-01 Issue:5 Volume:17 Page:3348-3351
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Hanada Takanori¹,Ohmagari Shinya²,Zkria Abdelrahman¹,Promros Nathaporn³,Yoshitake Tsuyoshi¹

Affiliation:

1. Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga-koen 6-1, Kasuga, Fukuoka 816-8580, Japan

2. Diamond Materials Team, Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Ikeda, Osaka 563-8577, Japan

3. Department of Physics, Faculty of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok 10520, Thailand

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

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1. Diode parameters and ultraviolet light detection characteristics of n-type silicon/p-type nanocrystalline diamond heterojunctions at different temperatures;Thin Solid Films;2020-09

2. Diode Parameters and Equivalent Electrical Circuit Model of n-Type Silicon/B-Doped p-Type Ultrananocrystalline Diamond Heterojunctions Manufactured Through Coaxial Arc Plasma Deposition;Journal of Nanoscience and Nanotechnology;2020-08-01

3. Temperature Dependence of Alternating Current Impedance in n-Type Si/B-Doped p-Type Ultrananocrystalline Diamond Heterojunctions Produced Through Pulsed Laser Deposition;Journal of Nanoscience and Nanotechnology;2020-01-01

4. Diode Parameters of Heterojunctions Comprising p-Type Ultrananocrystalline Diamond Films and n-Type Si Substrates;Journal of Nanoscience and Nanotechnology;2019-03-01