Deep-Trap States of GaN-Based Light Emitting Diodes Analyzed by Space Charge Limited Conduction Model-Reference-Cited by-同舟云学术

Deep-Trap States of GaN-Based Light Emitting Diodes Analyzed by Space Charge Limited Conduction Model

Published:2017-10-01 Issue:10 Volume:17 Page:7339-7343
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Jung Eunjin¹,Jeong Seonghoon¹,Ryou Jae-Hyun²,Kim Hyunsoo¹

Affiliation:

1. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju, Chonbuk 561-756, Korea

2. Department of Mechanical Engineering and Texas Center for Superconductivity at the University of Houston (TcSUH), University of Houston, Houston, TX 77204-4006, USA

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

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3. Counter-intuitive junction temperature behavior in AlGaN-based deep-ultraviolet light-emitting diodes;AIP Advances;2020-04-01

4. Observation and Modeling of Leakage Current in AlGaN Ultraviolet Light Emitting Diodes;IEEE Photonics Technology Letters;2019-11-01

5. Analysis of Deep-Trap States in GaN/InGaN Ultraviolet Light-Emitting Diodes after Electrical Stress;Journal of the Korean Physical Society;2018-12