Influence of Pinholes on MgO-Tunnel Junction Barrier Parameters Obtained from Current–Voltage Characteristics-Reference-Cited by-同舟云学术

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Influence of Pinholes on MgO-Tunnel Junction Barrier Parameters Obtained from Current–Voltage Characteristics

Published:2010-04-01 Issue:4 Volume:10 Page:2731-2734
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:J. Nanosci. Nanotech.

Author:

Ventura J.,Teixeira J. M.,Araujo J. P.,Sousa J. B.,Ferreira R.,Freitas P. P.,Langer J.,Ocker B.,Maass W.

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Self-consistent computation of spin torques and magneto-resistance in tunnel junctions and magnetic read-heads with metallic pinhole defects;Journal of Physics: Condensed Matter;2023-01-20

2. High-Efficient Spin Injection in GaN at Room Temperature Through A Van der Waals Tunnelling Barrier;Nanoscale Research Letters;2022-08-15

3. Change Character of Conductivity in Metal–Insulator–Metal Thin Films;physica status solidi (b);2021-01-06

4. High Tunneling Magnetoresistance in Magnetic Tunnel Junctions with Subnanometer Thick Al2O3 Tunnel Barriers Fabricated Using Atomic Layer Deposition;ACS Applied Materials & Interfaces;2020-07-08

5. High density plasma reactive ion etching of CoFeB magnetic thin films using a CH4/Ar plasma;Thin Solid Films;2012-10

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