Characterization of Implantation Induced Defects in Si-Implanted SiO2 Film

Abstract

Si-implanted thermal SiO2 layers and their annealing behaviour were investigated. In the results of variable-energy positron annihilation spectroscopy, the defects caused by ion implantation are manifested as a particularly low S parameter in the Si ion implantation region of the SiO2 layer. Compared with Fourier transform infrared measurements, it suggests that the decrease of the line shape S parameter after implantation is related to the compaction of implanted layers induced by the breaking of the SiO2 network structure. The presence of blue band emission (430–470 nm) in the implanted SiO2 layer is associated with neutral oxygen vacancy. An increase of the S parameter in the implanted layers is observed after annealing at different temperatures, but it is impossible completely recover the pre-implantation condition after a thermal treatment.