Author:
Yang W. C.,Wang C. W.,Wang J. C.,Chang Y. C.,Hsu H. C.,Nee Tzer-En,Chen L. J.,He J. H.
Abstract
Vertically aligned Er-doped ZnO nanorod arrays with sharp and intense 1.54 μm infrared emission have been fabricated on Si substrates through a well controlled spin-coating and annealing process. The synthesis method is advantageous for synthesizing ZnO nanostructures free
from structural defects, capability for large-scale production, minimum equipment requirement and product homogeneity. Er atoms were found to incorporate into ZnO lattice from XRD, ESCA, TEM, STEM/EDS and PL measurements. The single-crystal Er-doped nanorods maintained their high microstructural
quality after annealing for 4 hr at 800 °C. The intensity of 1.54 μm infrared emission was found to be correlated with the deep level green emission. The enhanced luminescence intensity and best ever narrow wavelength distribution of Er-doped ZnO nanorod arrays at 1.54 μm
emission will be conductive to applications in optoelectronic devices and optical communications.
Publisher
American Scientific Publishers
Subject
Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering
Cited by
16 articles.
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