Impact of Pocket-Size Variation on the Performance of GaAs0.1Sb0.9/InAs Based Heterojunction Double Gate Tunnel Field Effect Transistor
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Published:2018-07-01
Issue:7
Volume:13
Page:1009-1018
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ISSN:1555-130X
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Container-title:Journal of Nanoelectronics and Optoelectronics
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language:en
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Short-container-title:Journal of Nanoelectronics and Optoelectronics
Author:
Ahmad Syed Afzal,Alam Naushad,Amin S. Intekhab
Publisher
American Scientific Publishers
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials