SiGe Asymmetric Dual-k Spacer FinFETs-Based 6T SRAM Cell to Mitigate Read-Write Conflict
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Published:2018-04-01
Issue:4
Volume:13
Page:467-471
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ISSN:1555-130X
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Container-title:Journal of Nanoelectronics and Optoelectronics
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language:en
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Short-container-title:Journal of Nanoelectronics and Optoelectronics
Author:
Gopal Maisagalla,Sharma Vishal,Vishvakarma Santosh Kumar
Publisher
American Scientific Publishers
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
1 articles.
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1. Performance analysis of a novel 8T SRAM cell;INTERNATIONAL CONFERENCE ON RESEARCH IN SCIENCES, ENGINEERING & TECHNOLOGY;2022