Author:
Cai K. F.,Lei Q.,Zhang A. X.
Abstract
SiC nanowires are prepared by pyrolysis of hexamethyldisilane (HMDS), at 1200 °C in a flowing Ar atmosphere. The length of the nanowires is in millimeter scale. Transmission electron microscopy observations indicate that the diameters of the SiC nanowires are in the range of about
8 to 120 nm, and that most of the nanowires have numerous stacking faults. The formation mechanism of the nanowires is proposed.
Publisher
American Scientific Publishers
Subject
Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering
Cited by
25 articles.
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