Fabrication and DC Characterizations of AlGaN/GaN High Electron Mobility Transistors (HEMTs) with Fieldplate Over Passivation Layers
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Published:2011-12-01
Issue:6
Volume:9
Page:2302-2304
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ISSN:1546-198X
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Container-title:Sensor Letters
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language:en
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Short-container-title:sens lett
Author:
Benseddik N.,Benamara Z.,Mazari H.,Ameur K.,Soltani A.,Bluet J. M.
Publisher
American Scientific Publishers
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics