Affiliation:
1. Key Laboratory of Functional Materials and Devices for Special Environments of Chinese Academy of Sciences, Xin Jiang Technical Institute of Physics and Chemistry, Urumqi, 830011, China
Abstract
A quantum efficiency model of complementary metal-oxide semiconductor image sensors based on Shockley–Read–Hall and Auger recombination is developed using the technology computer-aided design tool, and the quantum efficiency degradation after irradiation is analyzed. By
simulating the surface recombination velocity and depletion region width of the photodiode, the decrease in the quantum efficiency of complementary metal-oxide semiconductor image sensors under short and long incident light wavelengths is found to be caused by the increase in the surface recombination
velocity and capture of optical carriers by radiation-induced defects in the epitaxial layer, respectively. In addition, a method to reduce the quantum efficiency degradation behavior of an irradiated pixel is discussed.
Publisher
American Scientific Publishers
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. Radiation hardness comparison of CMOS image sensor technologies at high total ionizing dose levels;Rizzolo;IEEE Transactions on Nuclear Science,2018
2. Prediction of CMOS image sensor dark current distribution and noise in a space radiation environment;Martin;IEEE Transactions on Nuclear Science,2013
3. Radiation-induced dose and single event effects in digital CMOS image sensors;Virmontois;IEEE Transactions on Nuclear Science,2014
4. Radiation-induced defects in 8t-CMOS global shutter image sensor for space applications;Le Roch;IEEE Transactions on Nuclear Science,2018
5. Detective quantum efficiency of intensified CMOS cameras for cherenkov imaging in radiotherapy;Alexander;Physics in Medicine & Biology,2020
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