Modeling of Field Dependent Maxwell-Wagner Interfacial Capacitance for Bilayer Metal-Insulator-Metal (MIM) Capacitors

Abstract

In this letter, we have presented the modeling of field dependent Maxwell-Wagner interfacial capacitance for bilayer Metal-Insulator-Metal (MIM) capacitors. The model was verified with measured capacitance–voltage characteristics of fabricated bilayer Al2O3/TiO2 MIM capacitors. The model reveals the origin of voltage linearity of MIM capacitors at low frequencies (<10 kHz). The proposed model for bilayer/multilayer MIM capacitors is very useful tool to design circuits for mixed signal, analog and digital circuits with low variation of capacitance for change in voltage.