Study of Reconfigurable Properties of DG-CNTFET with Different Oxide Material in Nanoscale Regime

Abstract

As the scaling of Si MOSFET is approaching its limits, new alternative devices are coming up to overcome these limitations. CNTFET becomes one of the most promising candidates for Si MOS technology and its stunning performance opens a door of new possibilities in the field of nano-electronics. Towards or beyond the end of international technology roadmap for semiconductor (ITRS) 2009, when MOS scaling will likely become ineffective and/or prohibitively costly, some version(s) of emerging devices will be needed if the industry has to continue to enjoy rapid improvements in performance, lower power dissipation, cost per function, and higher functional density. In this paper, we have studied the effect of different oxide material and its thickness on the reconfigurable properties of DG-CNTFET up to 5 nm length scale. We used Non Equilibrium Green’s Function Method (NEGF) and mode space method to simulate our device to study the effect of different oxide material at smaller length scale. For dielectric constant (K) = 11 and 16 the drain current starts saturating with gate voltage = 0.25 V. Whereas dielectric constant (K) = 25, the drain current starts saturating with gate voltage = 0.20 V. Hence our simulation study shows that high dielectric constant material is better for CNTFET based device at few nanometer scale.