Fabrication of Flexible In-Plane Gate Nanowire Transistor on a Paper Substrate

Abstract

Flexible in-plane gate SnO2 nanowire (NW) transistor gated by SiO2 acting as a solid electrolyte was fabricated on a paper substrate by using a transmission electron microscopy (TEM) Ni grid shadow mask. The operating voltage of in-plane gate SnO2 NW transistor was down to 1 V because of the large electric-double-layer (EDL) capacitance of the SiO2 electrolyte layer. Current on/off ratio (Ion/Ioff) and field-effect electron mobility (µEF) as well as subthreshold slope of this device were ~106, 74.7cm2·V−1s−1 and 80 mV·dec−1, respectively. The proposed flexible and low-voltage SnO2 NW transistors on paper substrate exhibit immense potential for applications in portable and flexible electronic devices.