Bias-Dependent Magnetoresistance Device Based on a Magnetically Confined GaAs/AlxGa1– xAs Heterostructure

Abstract

We apply a bias to a magnetoresistance (MR) device, which is constructed on surface of GaAs/AlxGa1– xAs heterostructure by patterning two asymmetric ferromagnetic stripes. Using improved transfer matrix method and Landauer–Büttiker theory, bias-dependent transmission, conductance and magnetoresistance ratio are calculated numerically. An obvious MR effect appears, because of a significant difference of transmission or conductance between parallel (P) and antiparallel (AP) magnetization configurations. MR ratio can be tuned by adjusting magnitude or direction of applied bias. These interesting features not only propose an alternative way to control MR effect, but also put forward an electrically-tunable MR device for magnetic information storage.