Study of Bonded Wafers by Using a Synchrotron Radiation Transmission X-ray Microscopy for Three-Dimensional Integrated Circuit
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Published:2020-07-01
Issue:7
Volume:15
Page:904-908
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ISSN:1555-130X
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Container-title:Journal of Nanoelectronics and Optoelectronics
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language:en
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Short-container-title:Journal of Nanoelectronics and Optoelectronics
Author:
Kim Youn-Jang,Lim Jae-Hong,Choi Kyeong-Keun
Abstract
Synchrotron radiation transmission X-ray microscopy (SRTXM) was applied for visualization of the interfacial layer in bonded wafer pairs. The X-ray energy of 6.54 keV with a monitoring window was utilized to enhance a resolution of transmission X-ray microscopy (TXM). The monitoring
window was designed a locally uncovered area of the bonded wafer pairs to make the thickness of bonded wafers less than 200 μm. The experimental results showed that the technique has sub-micron meter resolution. Also this technique can improve the resolution of the synchrotron X-ray
for nanoelectronics application.
Publisher
American Scientific Publishers
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
1 articles.
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