Bias Stress Effects on Different Dielectric Surfaces of Pentacene Thin-Film Transistors-Reference-Cited by-同舟云学术

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Bias Stress Effects on Different Dielectric Surfaces of Pentacene Thin-Film Transistors

Published:2011-05-01 Issue:5 Volume:11 Page:4338-4342
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:J. Nanosci. Nanotech.

Author:

Hyung Gun Woo,Koo Ja-Ryong,Seo Ji Hoon,Yang Jin Woo,Lee Ho Won,Pyo Sang Woo,Kim Young Kwan

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dependence of Bias Stress on Hydrophobicity of Gate Insulator in Solution-Processed Organic Thin-Film Transistors;Journal of Nanoscience and Nanotechnology;2016-08-01

2. Soluble N-Type organic thin-film transistors with enhanced electrical characteristics;Electronic Materials Letters;2013-11

3. The Effect of Trapped Charge on Silicon Nanowire Pseudo-MOSFETs;Journal of Nanoscience and Nanotechnology;2013-09-01

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