Photoelectrochemical Properties of Chemical Bath Deposited CdNiSe Thin Films

Abstract

The chemical bath deposition approach was used to prepare Cd1−xNixSe thin film photoelectrodes on a substrate made of stainless-steel plate. The constructed cell has the configuration: p-CdNiSe | NaOH (1M)+S (1M)+Na2S (1M) | C (graphite). Studying current-voltage characteristics in the dark, capacitance–voltage in the dark, barrier-height measurements, power output, photo response, and spectral response are all part of characterizing the photoelectrochemical cell of the photoelectrodes. For the composition of Cd0.7Ni0.3Se, the junction ideality factor was determined to be minimal. It was discovered that the flat band potential and barrierheight was 710 mV and 0.181 eV respectively. The power output characteristic reveals that, for composition x = 0.3, the short circuit current, open circuit voltage, conversion efficiency and fill factor are respectively, 161 μA/cm2, 260 mV, 0.64% and 48.11%. The greatest current recorded at 725 nm is displayed in the spectral response.