Dependence of Substrate Temperature and Working Gas Ratio in ZnO Films Grown on (001) GaAs Substrates by RF-Sputtering-Reference-Cited by-同舟云学术

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Dependence of Substrate Temperature and Working Gas Ratio in ZnO Films Grown on (001) GaAs Substrates by RF-Sputtering

Published:2016-04-01 Issue:2 Volume:11 Page:250-255
ISSN:1555-130X
Container-title:Journal of Nanoelectronics and Optoelectronics
language:en
Short-container-title:Journal of Nanoelectronics and Optoelectronics

Author:

Lee Soo-Man,Kim Kang-Bok,Ko Hang-Ju,Oh Dong-Cheol

Publisher

American Scientific Publishers

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Preparation of poly-Si films by inverted AIC process on graphite substrate;Journal of Crystal Growth;2017-12

2. Gas Absorption on Nano-Zinc Oxide by Electron Transfer Process;Journal of Nanoelectronics and Optoelectronics;2017-11-01

3. Comparative Study of Crystallographic and Electrical Properties of Zinc Oxide Films Fabricated by Dry and Wet Processes;Science of Advanced Materials;2017-09-01

4. Influence of Thermal Annealing on the Physical Properties of ZnO Films Grown on Si and GaAs Substrates;Journal of Nanoscience and Nanotechnology;2017-05-01

5. Comparative Study About the Structural Properties of ZnO Films Grown on Si, GaAs, And Al2O3 Substrates and a GaN Template;MATEC Web of Conferences;2016

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