LED Device Based on Single-Walled Carbon Nanotube Arrays

Abstract

The migration model of the (n, 0) zigzag SWNT is established on the basis of Mathiessen’s law to calculate carrier mobility, which are the foundation for performance analysis of electroluminescence light emission. The split-gate technique is used to create p-and n-doped regions in the single-walled carbon nanotube (SWNT) arrays that are separated by a gap with a width of several microns. The LED devices based on SWNT arrays using split-gate technique are fabricated and tested by using an optical measurement system. Compared to the LED with the central gate, the split-gate SWNT LED has enhanced the light generation efficiency of the intrinsic SWNT array segment by decreasing the potential barrier across the junction of the intrinsic SWNT array segment. The results demonstrate the luminescent principle of LED based on SWNT array in theoretical simulation and device measurement.