Thermal Stability of Electroless NiP Diffusion Barrier on BiTe-Based Thermoelectric Materials

Author:

Ngoc Nguyen Yen1,Quoc Dang Khanh2,Son Injoon1

Affiliation:

1. School of Materials Science and Engineering, Kyungpook National University, Daegu, 41566, South Korea

2. School of Materials Science and Engineering, Hanoi University of Science and Technology, Hanoi, 100000, Vietnam

Abstract

To produce BiTe-based thermoelectric modules, BiTe-based species with an electroless NiP (EN) coating layer acting as a diffusion barrier were connected to Cu electrodes by a soldering process. In order to investigate the thermal stability of the EN diffusion barrier on BiTe-based thermoelectric materials, Ni-coated BiTe-based modules were annealed at 200 °C for 200, 500, and 1000 h. The bonding strength of the BiTe species was >8 MPa, and it remained stable after 200, 500, and 1000 heating hours. The interfacial structure indicated the formation of a Sn–Cu intermetallic compound (IMC) below the EN-plated region. The morphology of Sn–Cu IMC before and after heating was observed. As the current flow was applied through the BiTe-based thermoelectric module, the temperatures on the hot and cold side of the modules were recorded. Owing to the thermal stability of the EN layer, the 200 h heated modules presented heating and cooling efficiencies similar to those of non-heated modules.

Publisher

American Scientific Publishers

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

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