Design of High Performance Low-Noise Amplifier Circuit Based on Complementary Metal Oxide Semiconductor Technology

Abstract

This paper designs a body-biased (BB) differential cascode low-noise amplifier (LNA) with current bias (CR) and capacitor cross-coupling (CCC) technology that meets the bandwidth requirements of 5 GHz wireless applications. In the design, the CCC technology in the differential cascode topology is used to effectively suppress the common mode noise, thereby improving the noise figure. The series resonant network eliminates parasitic capacitance at the input and output ends, thereby improving the power transmission efficiency. The CR technology formed by the intermediate capacitor shares the DC current input to the output device, thereby increasing the gain. This paper uses BB technology in the design to lower the threshold of the cascode device and improve the transconductance, which further improves the gain and reduces the power consumption. The CCC technology used in the paper improves linearity by eliminating the non-linear components present in the input device, which will not interfere with the transconductance of the output stage. This article has obtained excellent performance parameters including gain, noise figure (NF) and linearity without affecting the power consumption, integration and cost of the proposed design.