Study of InGaZnO Thin Film Transistors With Dual Treatment of Pre-Oxidation ZrO<sub>2</sub> High-<i>κ</i> Dielectric and Post-Oxidation InGaZnO Channel by Neutral Beam System-Reference-Cited by-同舟云学术

Study of InGaZnO Thin Film Transistors With Dual Treatment of Pre-Oxidation ZrO₂ High-κ Dielectric and Post-Oxidation InGaZnO Channel by Neutral Beam System

Published:2021-11-01 Issue:11 Volume:16 Page:1733-1738
ISSN:1555-130X
Container-title:Journal of Nanoelectronics and Optoelectronics
language:en
Short-container-title:Journal of Nanoelectronics and Optoelectronics

Author:

Wu Chien-Hung¹,Lin Shuo-Yen²,Chung Wen-Chun²,Chang Kow-Ming³,Liu Po-Tsun⁴,Lien Der-Hsien³,Lin Yu-Hsuan⁵

Affiliation:

1. Department of Optoelectronics and Materials Engineering, Chung Hua University, Hsinchu, 300, Taiwan

2. College of Electrical and Computing Engineering, National Yang Ming Chiao Tung University, Hsinchu, 300, Taiwan

3. Institute of Electronics Engineering, National Yang Ming Chiao Tung University, Hsinchu, 300, Taiwan

4. Department of Photonics, National Yang Ming Chiao Tung University, Hsinchu, 300, Taiwan

5. Graduate Program for Science and Technology of Accelerator Light Source, National Yang Ming Chiao Tung University, Hsinchu, 300, Taiwan

Abstract

With better field-effect mobility (>10 cm2/V·S), smaller subthreshold swing (S.S), and other electrical characteristics, amorphous IGZO thin film transistors (a-IGZO TFTs) has been studied extensively for its promising applications, such as liquid crystal displays and flat-panel displays. In this investigation, TFT devices are experimented to enhance the electrical characteristics. Atmosphere Pressure-PECVD (AP-PECVD) is used to deposit a-IGZO, which is designed as device channel layer. In order to maintain enough gate control ability with thinner effective oxide thickness (EOT), high-κ material ZrO2 is used as dielectric, lowering the gate leaking current. With post dual neutral beams O2 plasma treated on both a-IGZO channel layer 400 W and ZrO2 dielectric 100 W, the best result for experimental devices show that the a-IGZO TFT has electrical characteristics of field-effect mobility of 22.22 cm2/V·S, threshold voltage (VT) of 2.86 V, S.S of 74 mV/decade, and Ion/Ioff ratio of 8.2×105. Keywor

Publisher

American Scientific Publishers

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials