Numerical Electron Mobility Model of Nanoscale Symmetric, Asymmetric and Independent Double-Gate MOSFETs
-
Published:2013-04-01
Issue:4
Volume:10
Page:763-771
-
ISSN:1546-1955
-
Container-title:Journal of Computational and Theoretical Nanoscience
-
language:en
-
Short-container-title:Jnl of Comp & Theo Nano
Author:
He Jin,Xu Yiwen,Chen Lin,Zhang Lining,Zhou Xingye,Ma Chenyue,Cao Yu,Ye Yun,Wang Cheng,Liang Hailang,Chan Mansun
Publisher
American Scientific Publishers
Subject
Electrical and Electronic Engineering,Computational Mathematics,Condensed Matter Physics,General Materials Science,General Chemistry