An Explicit Surface Potential Model of Bulk-MOSFETs with Inclusion of Poly-Gate Accumulation, Depletion, and Inversion Effects-Reference-Cited by-同舟云学术

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An Explicit Surface Potential Model of Bulk-MOSFETs with Inclusion of Poly-Gate Accumulation, Depletion, and Inversion Effects

Published:2012-07-01 Issue:7 Volume:9 Page:963-968
ISSN:1546-1955
Container-title:Journal of Computational and Theoretical Nanoscience
language:en
Short-container-title:j comput theor nanosci

Author:

Shi Min,Song Yan,Zhang Zhenjuan,Sun Ling,Wang Qiang,He Jin,Chan Mansun

Publisher

American Scientific Publishers

Subject

Electrical and Electronic Engineering,Computational Mathematics,Condensed Matter Physics,General Materials Science,General Chemistry

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Derivative Superposition Numerical Method for Double-Gate MOSFET Transistor Application to RF Mixer;Journal of Computational and Theoretical Nanoscience;2014-09-01

2. A Gate-All-Around Tunneling Field-Effect Transistor with SiO₂ Core and Si Shell Structure;Journal of Computational and Theoretical Nanoscience;2014-08-01

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