Numerical Investigation of Kink Effect Correlated with Defects in AlGaN/GaN High Electron Mobility Transistors
-
Published:2013-06-01
Issue:6
Volume:10
Page:1347-1353
-
ISSN:1546-1955
-
Container-title:Journal of Computational and Theoretical Nanoscience
-
language:en
-
Short-container-title:Jnl of Comp & Theo Nano
Author:
Charfeddine M.,Echouchene F.,Zaidi M. A.,Maaref H.
Publisher
American Scientific Publishers
Subject
Electrical and Electronic Engineering,Computational Mathematics,Condensed Matter Physics,General Materials Science,General Chemistry
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Direct Extraction of Equivalent Circuit Parameters for GaAs pHEMT;Journal of Computational and Theoretical Nanoscience;2015-04-01