Design and Fabrication of Optical Sensors Based on Neodymium (Nd) Doped Titanium Dioxide (TiO2) Layer Prepared by Sol–Gel Dip-Coating Method

Abstract

A high performance and stable UV photodetector with a bsorbant layer of Neodymium (Nd) doped Titanium dioxide (TiO2) is reported. The Neodymium (Nd) doped Titanium dioxide (TiO2) layer was chractarized with several tools. XRD and FTIR revaled that the crsytal structure of Neodymium (Nd) doped Titanium dioxide (TiO2) has changed compared with that of the undoped anatase Titanium dioxide (TiO2). Furthermore, the ultraviolet-visibleand photoluminescence spectrometers reveal that the measured absorption and emission of the hybrid Nd doped TiO2 layer have significantly enhanced compared with that of the undoped Titanium dioxide (TiO2). In addition. The photodetector based on Neodymium (Nd) doped Titanium dioxide (TiO2) shows a low-level dark current (Idark = 0.13 nA), a high-level light current (Ilight = 15655.6 nA), an ON/OFF ratio (1.2×105), a responsivity (R = 0.32 A/W), and a specific detectivity (D* = 4.2×1012 J). The photoresponsivity (R) of Nd doped TiO2 layer was improved by nearly 3 times in magnitude in comparison with the photoresponsivity of the undoped TiO2 layer PD without the Nd. This result pave the way for utlizing the hybrid Nd doped TiO2 in enhncing performance of optolectronics.