Structural and Optical Characteristics of Epitaxially Grown SiGe on Si for Electronic and Photonic Device Applications-Reference-Cited by-同舟云学术

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Structural and Optical Characteristics of Epitaxially Grown SiGe on Si for Electronic and Photonic Device Applications

Published:2017-10-01 Issue:10 Volume:12 Page:1129-1133
ISSN:1555-130X
Container-title:Journal of Nanoelectronics and Optoelectronics
language:en
Short-container-title:Journal of Nanoelectronics and Optoelectronics

Author:

Yu Eunseon,Ryu Seung Wook,Radamson Henry H.,Cho Seongjae

Publisher

American Scientific Publishers

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Preparation of Polyaniline/Polyurethane (PANI/PU) Photonic Thin Films by Evaporative Self-Assembly: Growth and Properties;Science of Advanced Materials;2018-08-01

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