Different Ground Plane (GP) Architectures on 25 nm Single-Gate (SG) versus Double-Gate (DG) UTBB SOI MOSFETs from Analog and RF Perspectives
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Published:2017-04-01
Issue:4
Volume:12
Page:392-399
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ISSN:1555-130X
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Container-title:Journal of Nanoelectronics and Optoelectronics
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language:en
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Short-container-title:Journal of Nanoelectronics and Optoelectronics
Author:
Othman Noraini,Arshad M. K. Md,Sabki S. N.
Publisher
American Scientific Publishers
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials