Hysteresis Type Current–Voltage Characteristics of Indium Tin Oxide/Poly-[2-Methoxy-5-(2 -Ethyl-Hexyloxy)1,4-Phenylenevinylene] (MEHPPV) + Zinc Oxide (ZnO)/Al Structure: Towards Memory Device

Author:

Ramana Ch. V. V.,Moodley M. K.,Kumar A. B. V. Kiran,Maity A.,Srinivasu V. V.

Publisher

American Scientific Publishers

Subject

General Materials Science

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Low-voltage, solution-processed, two-terminal organic bistable memory device;Proceedings of the Institution of Mechanical Engineers, Part E: Journal of Process Mechanical Engineering;2022-09-15

2. Synthetic approaches of conducting polymer nanocomposites;Conjugated Polymers for Next-Generation Applications;2022

3. Solution-based spin cast-processed O-shaped memory devices;Journal of Materials Science: Materials in Electronics;2021-01

4. rGO/ZnO nanorods/Cu based nanocomposite having flower shaped morphology: AC conductivity and humidity sensing response studies at room temperature;Journal of Materials Science: Materials in Electronics;2019-07-26

5. Reduced Graphene Oxide/ZnO Nanorods Nanocomposite: Structural, Electrical and Electrochemical Properties;Journal of Inorganic and Organometallic Polymers and Materials;2019-04-26

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