2D Effective Electron Mass at the Fermi Level in Accumulation and Inversion Layers of MOSFET Nano Devices-Reference-Cited by-同舟云学术

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2D Effective Electron Mass at the Fermi Level in Accumulation and Inversion Layers of MOSFET Nano Devices

Published:2018-04-01 Issue:4 Volume:18 Page:2856-2874
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Singh S. L¹,Singh S. B²,Ghatak K. P³

Affiliation:

1. Department of Electronics and Communication Engineering, National Institute of Technology Manipur, Langol, Imphal 795001, Manipur, India

2. Department of Computer Science Engineering, National Institute of Technology Manipur, Langol, Imphal 795001, Manipur, India

3. University of Engineering and Management, Department of Electronic and Communication Engineering, New Town Kolkata 700156, West Bengal, India

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the Effective Electron Mass in Quantum-Confined THz Materials;Terahertz Wireless Communication Components and System Technologies;2022

2. Screening Length, Terahertz Frequency and Opto-electronic Compounds;Lecture Notes in Electrical Engineering;2021-09-22

3. The Elastic Constants in Opto-electronic Materials Under Terahertz Frequency;Lecture Notes in Electrical Engineering;2021-09-22

4. The Carrier Statistics, Terahertz Frequency, Extremely Degenerate Opto-electronic Materials and All That;Emerging Trends in Terahertz Engineering and System Technologies;2021

5. The Magneto Electron Statistics in Heavily Doped Doping Super-Lattices at Terahertz Frequency;Advances in Terahertz Technology and Its Applications;2021

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