The Impact of the Shallow-Trench Isolation Effect on Flicker Noise of Source Follower MOSFETs in a CMOS Image Sensor-Reference-Cited by-同舟云学术

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The Impact of the Shallow-Trench Isolation Effect on Flicker Noise of Source Follower MOSFETs in a CMOS Image Sensor

Published:2018-06-01 Issue:6 Volume:18 Page:4217-4221
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Fan C. C¹,Chiu Y. C¹,Liu C²,Lai W. W¹,Cheng C. H³,Lin D. L⁴,Li G. R⁴,Lo Y. H⁴,Chang C. W⁴,Tsai C. C⁴,Chang C. Y¹

Affiliation:

1. Department of Electronics Engineering, National Chiao Tung University, Hsinchu City 30010, Taiwan

2. Department of Electro-Physics, National Chiao Tung University, Hsinchu City 30010, Taiwan

3. Department of Mechatronic Engineering, National Taiwan Normal University, Taipei, 106, Taiwan

4. Himax Technologies, Inc., Tainan City 74148, Taiwan

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

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1. Design Techniques Evaluation to Mitigate RTS Noise Effect in Column ADC of 3D Stacked Image Sensors;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

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