Photodetector Based on Multilayer SnSe2 Field Effect Transistor-Reference-Cited by-同舟云学术

Photodetector Based on Multilayer SnSe2 Field Effect Transistor

Published:2018-06-01 Issue:6 Volume:18 Page:4243-4247
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Kang Moonshik¹,Rathi Servin¹,Lee Inyeal¹,Li Lijun¹,Khan Muhammad Atif¹,Lim Dongsuk¹,Lee Yoontae¹,Park Jinwoo¹,Pham Anh Tuan²,Duong Anh Tuan²,Cho Sunglae²,Yun Sun Jin³,Kim Gil-Ho¹

Affiliation:

1. College of Information and Communication Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea

2. Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 44610, Korea

3. ICT Components and Materials Technology Research Division, Electronics and Telecommunications Research Institute, Daejeon 34129, Korea

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

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