X-Band GaN High Electron Mobility Transistor Power Amplifier on 6H-SiC with 110 W Output Power-Reference-Cited by-同舟云学术

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X-Band GaN High Electron Mobility Transistor Power Amplifier on 6H-SiC with 110 W Output Power

Published:2018-11-01 Issue:11 Volume:18 Page:7451-7454
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Wang Quan¹,Wang Xiaoliang²,Xiao Hongling²,Wang Cuimei²,Jiang Lijuan²,Feng Chun²,Liu Fengqi²,Xu Xiangang¹,Wang Zhanguo²

Affiliation:

1. State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People’s Republic of China

2. Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People’s Republic of China

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication and characterization of AlGaN/GaN HEMTs with high power gain and efficiency at 8 GHz;Journal of Semiconductors;2021-12-01

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