Study on Strain Compensation for Multiple-Quantum Well in Infrared Light-Emitting Diode Using the InxGa1−xP Strain Barrier-Reference-Cited by-同舟云学术

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Study on Strain Compensation for Multiple-Quantum Well in Infrared Light-Emitting Diode Using the InxGa1−xP Strain Barrier

Published:2018-03-01 Issue:3 Volume:18 Page:2014-2017
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Kim Dae-Kwang¹,Lee Hyung-Joo¹

Affiliation:

1. CF Technology Division, AUK Corporation, Iksan 54630, Jeonbuk, South Korea

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial Heterostructures of the Active Region for Near-Infrared LEDs;Semiconductors;2024-03

2. Development of strain compensated InGaAs/InGaP multiple quantum wells in the 1.05–1.50 eV energy range for multijunction solar cells;Micro and Nanostructures;2023-08

3. High performance near-infrared III-Arsenide laser diodes with p-AlGaAs barriers;Optical Materials;2023-05

4. AlyGa1−yAs Bound GazIn1−zP Strain Compensation for Optical Enhancement of In0.07GaAs/GaAs1−xPx 940-nm Light-Emitting Diodes;Journal of the Korean Physical Society;2019-07

5. Balanced Strain Compensation of In0.07GaAs/Al0.2GaAs/GaAsP0.06 for Improving 940 nm Infrared Light-Emitting Diodes;Journal of Nanoscience and Nanotechnology;2019-04-01

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