Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth-Reference-Cited by-同舟云学术

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Defect reduction in heteroepitaxial InP on Si by epitaxial lateral overgrowth

Published:2014-02-01 Issue:1 Volume:4 Page:41-53
ISSN:2158-5849
Container-title:Materials Express
language:en
Short-container-title:Mat Express

Author:

Junesand Carl,Gau Ming-Horn,Sun Yan-Ting,Lourdudoss Sebastian,Lo Ikai,Jimenez Juan,Postigo Pablo Aitor,Morales Fransisco M.,Hernandez Jesus,Molina Sergio,Abdessamad Aouni,Pozina Galia,Hultman Lars,Pirouz Pirouz

Publisher

American Scientific Publishers

Subject

General Materials Science

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Monolithic III/V integration on (001) Si substrate;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30

2. Epitaxial lateral overgrowth of III-V semiconductors on Si for photonic integration;Future Directions in Silicon Photonics;2019

3. Growth of III–V semiconductors and lasers on silicon substrates by MOCVD;Future Directions in Silicon Photonics;2019

4. How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches;Semiconductor Science and Technology;2018-08-17

5. Trends in heteroepitaxy of III-Vs on silicon for photonic and photovoltaic applications;SPIE Proceedings;2017-02-20

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