Effect of Hydrogen Post-Annealing on Transparent Conductive ITO/Ga2O3 Bi-Layer Films for Deep Ultraviolet Light-Emitting Diodes

Abstract

The effect of hydrogen post-annealing on the electrical and optical properties of ITO/Ga2O3 bi-layer films, deposited by RF magnetron sputtering, is investigated for potential applications to transparent conductive electrodes of ultraviolet (UV) light-emitting diodes. Three samples—an as-deposited sample and two samples post-annealed in N2 gas and N2–H2 gas mixture—were prepared and annealed at different temperatures ranging from 100 °C to 500 °C for comparison. Among these samples, the sample annealed at 300 °C in a mixture of N2 and H2 gases shows the lowest sheet resistance of 301.3 Ω/□ and a high UV transmittance of 87.1% at 300 nm.