Electrical Characteristics of Ni-CNT-SiO2-SiC Structured 4H-SiC MIS Capacitors
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Published:2015-10-01
Issue:10
Volume:15
Page:7542-7545
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ISSN:1533-4880
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Container-title:Journal of Nanoscience and Nanotechnology
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language:en
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Short-container-title:j nanosci nanotechnol
Author:
Lee Taeseop,Kang Min-Seok,Ha Tae-Jun,Koo Sang-Mo
Abstract
In this study, the electrical characteristics of Ni-CNT-SiO2-SiC structured 4H-SiC MIS capacitors were investigated. The effect of CNTs in the gate/insulator interface have been characterized by C–V measurement at 300 to 500K and J–V have also been
measured. The experimental flat-band voltage tends to change with or without CNTs. Current densities of both devices are observed a negligible difference up to 3 V. It has been found that adding CNTs and/or change of temperature can help to control the positive and/or negative flat-band voltage
shift.
Publisher
American Scientific Publishers
Subject
Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering