Interface Trap and Oxide Charge Generation in p-MOSFETs by Direct/Fowler-Nordheim Tunneling Under Negative Bias Temperature Stress
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Published:2016-10-01
Issue:10
Volume:16
Page:10369-10372
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ISSN:1533-4880
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Container-title:Journal of Nanoscience and Nanotechnology
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language:en
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Short-container-title:j nanosci nanotechnol
Author:
Choi Pyungho,Kim Dongsoo,Kim Sangsub,Kim Hyunwoo,Choi Byoungdeog
Publisher
American Scientific Publishers
Subject
Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering