High-Sensitivity Low-Temperature Poly-Silicon Lateral Photodetector with Ultrathin Absorption Layer via Body-Extension-Contact Structure
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Published:2016-12-01
Issue:12
Volume:16
Page:12708-12713
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ISSN:1533-4880
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Container-title:Journal of Nanoscience and Nanotechnology
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language:en
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Short-container-title:j nanosci nanotechnol
Author:
Wei Yin-Chang1,
Lee I-Che1,
Cheng Huang-Chung1
Affiliation:
1. Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan
Publisher
American Scientific Publishers
Subject
Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering