Etching of Magnetic Tunnel Junction Materials Using Reactive Ion Beam-Reference-Cited by-同舟云学术

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Etching of Magnetic Tunnel Junction Materials Using Reactive Ion Beam

Published:2016-11-01 Issue:11 Volume:16 Page:11823-11830
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Jeon Min Hwan¹,Yang Kyung Chae²,Park Jin Woo²,Yun Deok Hyun²,Kim Kyong Nam³,Yeom Geun Young¹

Affiliation:

1. SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon, Gyeonggi-do 440-746, South Korea

2. Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 440-746, South Korea

3. School of Advanced Materials Science and Engineering, Daejeon University, Daejeon, 330-716, South Korea

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on etch characteristics of magnetic tunnel junction materials using rf-biased H2/NH3 reactive ion beam;Journal of Vacuum Science & Technology A;2023-04-03

2. Etch characteristics of magnetic tunnel junction materials using H2/NH3 reactive ion beam;Nanotechnology;2020-11-11

3. Plasma Induced Damage Reduction of Ultra Low-k Dielectric by Using Source Pulsed Plasma Etching for Next BEOL Interconnect Manufacturing;IEEE Transactions on Semiconductor Manufacturing;2020-05

4. Diagnosis of capacitively coupled plasma driven by pulse-modulated 27.12 MHz by using an emissive probe;Acta Physica Sinica;2020

5. Photopatternable Magnetic Hollowbots by Nd-Fe-B Nanocomposite for Potential Targeted Drug Delivery Applications;Micromachines;2018-04-13

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