Design Optimization of AlN/GaN-Based Double-Heterojunction Fin-Type High Electron Mobility Transistors for High On-State Current-Reference-Cited by-同舟云学术

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Design Optimization of AlN/GaN-Based Double-Heterojunction Fin-Type High Electron Mobility Transistors for High On-State Current

Published:2016-10-01 Issue:10 Volume:16 Page:10193-10198
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Kwon Ra Hee,Eun Hye Rim,Seo Jae Hwa,Yoon Young Jun,Jang Young In,Lee Jung-Hee,Kang In Man

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Size on Optical and Electrical Properties of GaN-Based Membrane μ-LED;Journal of Nanoscience and Nanotechnology;2020-01-01

2. GaN‐based FinFET with double‐channel AlGaN/GaN heterostructure;Electronics Letters;2018-03

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