Degradation Characteristics of MgO Based Magnetic Tunnel Junction Caused by Surface Roughness of Ta/Ru Buffer Layers-Reference-Cited by-同舟云学术

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Degradation Characteristics of MgO Based Magnetic Tunnel Junction Caused by Surface Roughness of Ta/Ru Buffer Layers

Published:2016-01-01 Issue:1 Volume:16 Page:654-657
ISSN:1533-4880
Container-title:Journal of Nanoscience and Nanotechnology
language:en
Short-container-title:j nanosci nanotechnol

Author:

Lee Jung Min,Choi Chul Min,Sukegawa Hiroaki,Lee Jeong Yong,Mitani Seiji,Song Yun-Heub

Publisher

American Scientific Publishers

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,General Chemistry,Bioengineering

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of low-frequency AC magnetic susceptibility of Ru/Co60Fe20V20 and Ta/Co60Fe20V20 films;Journal of Magnetism and Magnetic Materials;2018-11

2. Optimization of the buffer surface of CoFeB/MgO/CoFeB-based magnetic tunnel junctions by ion beam milling;Applied Surface Science;2017-12

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